In the paper electric resistance (conductance) and thermal electrical phenomenon of golden and semiconductor nanowires are mentioned. we've analysed and measured nanowires created of gold, copper, tin, Si and element as a result of victimization them for producing of integrated electronic devices. Electrical electrical phenomenon GE and thermal electrical phenomenon GT of a nanostructure describe the result of lepton transport in nanowires. Electrical electrical phenomenon division in nanowires has been determined in units of G0 = 2e2 /h = (12.9)-1 up to 5 quanta of electrical phenomenon in line with in line with projected by Landauer [1]. Within the paper we tend to gift our measurements of electrical electrical phenomenon division in Au nanowires at temperature [2]. The division of thermal electrical phenomenon is taken into account during a similar approach just like the electrical electrical phenomenon. In one-dimension systems ar shaped semiconducting channels.
Waldemar Nawrocki